irg5k50p5k50pm06e IRG5U100HF06A 1 www.irf.com ? 2014 international rectifier submit datasheet feedback october 1 , 2014 absolute maximum ratings of igbt v ces collector to emitter voltage 600 v v ges continuous gate to emitter voltage 20 v i c continuous collector current t c = 80c 100 a t c = 25c 130 a i cm pulse collector current t j = 150c 200 a p d maximum power dissipation (igbt) t c = 25c, t j = 150c 400 w t j maximum igbt junction temperature 150 c t jop maximum operating junction temperature range - 40 to +150 c t stg - 40 to +125 c storage temperature v ces = 600v i c = 100a at t c = 80 ? c t sc 10sec v ce(on) = 2.60v at i c = 100a igbt half - bridge pow ir 34 ? package features benefits low v ce(on) and switching losses high efficiency in a wide range of applications 100% rbsoa tested rugged transient performance 10sec short circuit safe operating area pow ir 34 ? package industry standard lead free rohs compliant, environmental friendly base part number package type standard pack quantity orderable part number IRG5U100HF06A pow ir 34 ? box 80 IRG5U100HF06A applications ? industrial motor drive ? uninterruptible power supply ? welding and cutting machine ? switched mode power supply ? induction heating ? ac inverter drive downloaded from: http:///
irg5k50p5k50pm06e IRG5U100HF06A 2 www.irf.com ? 2014 international rectifier submit datasheet feedback october 1 , 2014 switching characteristics of igbt parameter min. typ. max. unit test conditions t d(on) turn - on delay time 130 ns t j = 25c v cc =300v, i c = 100a, r g = 20?, v ge =15v, inductive load 135 t j = 125c t r rise time 100 ns t j = 25c 100 t j = 125c t d(off) turn - off delay time 350 ns t j = 25c 805 t j = 125c t f fall time 85 ns t j = 25c 115 t j = 125c e on turn - on switching loss 1.43 mj t j = 25c 1.77 t j = 125c e off turn - off switching loss 1.02 mj t j = 25c 3.36 t j = 125c q g total gate charge 530 nc t j = 25c c ies input capacitance 6.1 nf v ce = 25v, v ge = 0v, f 1mhz, t j = 25c c oes output capacitance 0.64 c res reverse transfer capacitance 0.26 rbsoa reverse bias safe operating area trapezoid i c = 200a,v cc = 480v, v p = 600v, r g = 15?, v ge = +15v to 0v, t j = 150c scsoa short circuit safe operating area 10 s v cc = 300v, v ge = 15v, t j = 150c electrical characteristics of igbt at t j = 25 c (unless otherwise specified) parameter min. typ. max. unit test conditions v (br)ces collector to emitter breakdown voltage 600 v v ge = 0v, i c = 1ma v ge(th) gate threshold voltage 3.5 4.5 5.5 v i c = 0.25ma, v ce = v ge v ce(on) collector to emitter saturation voltage 2.60 2.90 v t j = 25c i c = 100a, v ge = 15v 3.00 v t j = 125c i ces collector to emitter leakage current 1 ma v ge = 0v, v ce = v ces i ges gate to emitter leakage current 400 na v ge = 20v, v ce = 0 downloaded from: http:///
irg5k50p5k50pm06e IRG5U100HF06A 3 www.irf.com ? 2014 international rectifier submit datasheet feedback october 1 , 2014 absolute maximum ratings of freewheeling diode v rrm repetitive peak reverse voltage 600 v i f diode continuous forward current, t c = 25c 200 a diode continuous forward current, t c = 80c 100 i fm pulse diode current 200 a module characteristics min. typ. max. unit parameter v iso isolation voltage (all terminals shorted), f = 50hz, 1minute 2500 v r jc junction - to - case (igbt) 0.31 c/w r jc junction - to - case (diode) 1.05 c/w r cs case - to - sink (conductive grease applied) 0.1 c/w m power terminals screw: m5 3.0 5.0 nm m mounting screw: m6 4.0 6.0 nm g weight 165 g electrical and switching characteristics of freewheeling diode parameter typ. unit test conditions max. v f forward voltage 1.50 v t j = 25c i f = 100a , v ge = 0v 1.80 1.50 t j = 125c i rr peak reverse recovery current 50 a t j = 25c i f 100a, di/dt=1100a/ s, v rr = 300v, v ge = - 15v 60 t j = 125c q rr reverse recovery charge 3.0 c t j = 25c 5.3 t j = 125c e rec reverse recovery energy 0.5 mj t j = 25c 1.0 t j = 125c downloaded from: http:///
irg5k50p5k50pm06e IRG5U100HF06A 4 www.irf.com ? 2014 international rectifier submit datasheet feedback october 1 , 2014 fig.1 typical igbt saturation characteristics fig.2 typical igbt output characteristics fig.3 typical diode forward characteristics fig. 4 typical capacitance characteristics fig.5 typical switching loss vs. collector current fig.6 typical switching loss vs. gate resistance 0 20 40 60 80 100 120 140 160 180 200 0.0 0.6 1.2 1.8 2.4 3.0 3.6 4.2 4.8 v ce (v) i c (a) v ge =15v t j =125c t j =25c 0 20 40 60 80 100 120 140 160 180 200 0.0 0.6 1.2 1.8 2.4 3.0 3.6 4.2 4.8 v ce (v) i c (a) t j =125c v ge =17v v ge =15v v ge =13v v ge =11v v ge =9v 0 20 40 60 80 100 120 140 160 180 200 0.0 0.4 0.8 1.2 1.6 2.0 2.4 v f (v) i f (a) v ge =0v t j =125c t j =25c 0 5 10 15 20 25 0 2 4 6 8 10 12 c (nf) v ce (v) v ce = 0 v,f=1mhz c ies c oes 0 20 40 60 80 100 120 140 160 180 200 0 1 2 3 4 5 6 7 8 e (mj) i c (a) v cc =300v,v ge =+/-15v , rg =20 ohm,t j =125c e off e on e rec 0 5 10 15 20 25 30 35 40 45 50 0 1 2 3 4 5 6 7 e (mj) r g ( ? ) v cc = 300v , v ge = +/-15v , i c = 100a , t j = 125 c e off e on e rec downloaded from: http:///
irg5k50p5k50pm06e IRG5U100HF06A 5 www.irf.com ? 2014 international rectifier submit datasheet feedback october 1 , 2014 fig.7 typical load current vs. frequency fig.8 reverse bias safe operation area (rbsoa) fig.9 typical transient thermal impedance (igbt) fig.10 typical transient thermal impedance (diode) 0 20 40 60 80 100 120 1 10 100 duty cycle:50% t j =125c t c =80c rg=20 ohm,v ge =15v frequency(khz) load current(a) square wave: diode as specified v cc i 0.001 0.01 0.1 1 2 0.0 0.1 0.2 0.3 0.4 z th jc (k/w) t ( s ) z th jc :igbt 0.001 0.01 0.1 1 2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 z th jc ( k/w ) t ( s ) z th jc :diode 0 100 200 300 400 500 600 0 50 100 150 200 i c (a) v ces (v) module chip downloaded from: http:///
irg5k50p5k50pm06e IRG5U100HF06A 6 www.irf.com ? 2014 international rectifier submit datasheet feedback october 1 , 2014 internal circuit: package outline (unit: mm): qualification information ? qualification level industrial moisture sensitivity level not applicable rohs compliant yes ? qualification standards can be found at international rectifie rs web site: http://www.irf.com/product - info/reliability/ ir world headquarters: 101 north sepulveda blvd, el segundo, california, 90245, usa to contact international rectifier, please visit: http://www.irf.com/whoto - call/ downloaded from: http:///
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